The Interfacial Properties of Monolayer MX–Metal Contacts

Binary IV–VI chalcogenides MXs (SnS, SnSe, SnTe, GeS, GeSe, and GeTe), as a family two-dimensional (2D) semiconductor material, have proper bandgap, high carrier mobility, stability in ambient conditions, pucker structure, hence they are potential channel materials for the next-generation electronic optoelectronic devices. 2D devices should directly contact metal electrodes to inject suitable types of carriers, on account random dopant fluctuation. However, Schottky is always formed at interface, which degrades performance Herein, we report characteristics field-effect transistors (FETs) with Graphene(Gr)/Ag/Au (two-interface model) by using quantum transport calculations density functional theory. At vertical FETs form Van der Waals (vdW) type after being contacted Gr electrode, an Ohmic Ag Au electrodes. lateral SnTe (armchair zigzag), GeS (zigzag), GeSe (zigzag) electrode get desired p-type or quasi contact, suggestive device such device. Our simulation provides theoretical foundation choice future ML